HEXFET® Power MOSFET. IRFD • Dynamic dv/dt Rating. • For Automatic Insertion. • End Stackable. • °C Operating Temperature. • Fast Switching. IRFD datasheet, IRFD pdf, IRFD data sheet, datasheet, data sheet, pdf, International Rectifier, 60V Single N-Channel HEXFET Power MOSFET in a. IRFD MOSFET N-CH 60V A 4-DIP Vishay IR datasheet pdf data sheet FREE from Datasheet (data sheet) search for integrated circuits ( ic).
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IRFD Datasheet(PDF) – Vishay Siliconix
We have no fast switching requirements.
Is the IRFD a suitable part for this purpose? From the datasheet, I irff014 it should be fine to use:. Have we overlooked anything?
Do we have to expect any problems when driving the gate with less than that? This is a one-off design, and for assembly simplicity we would prefer through-hole and not SMT devices.
For simplicity, I would use a part specified with an Rds on for a Vgs of datashret. Typically the datasheet is much simpler to interpret.
There are quite a irfc014 parts which are specifically rated at 4. Is there plenty of space? If through-hole is important, it might be easier to get a physically larger package, like an IPAK.
If this is a one off, or small volume system, I would make a ‘no-brain’ assumption, to make life easier, and, at least, double the required current to get a minimum device current. For small volumes vatasheet difference irfs014 part cost is likely a small fraction of an hour of my time. Hence it isn’t worth designing something close to an edge which might use time later to check and debug it.
Home Questions Tags Users Unanswered. From the datasheet, I think it should be fine to use: You’ll need to re-consider your RDSon calculations. When you give the gate something in the range of 4. This will raise the temperature increase in your FET at load.
MichaelKaras Thanks for pointing this out! Is there are strong reason for using that part? Further the part is clearly specified by the manufacturer to work in that region. No, there is no strong reason for that part. I went through a list of commonly used parts and picked a non-SMT part which seemed to meet the specifications. JonasWielicki – It’s simpler and ‘safer’ to use a device rated for the gate-voltage available.
I’d recommend using a device with lots of headroom. That might be a way to make an SMD device usable within a through-hole technology design.
JonasWielicki – Yes, that looks like a robust solution. Sign up or log in Sign up using Google.
IRFD Vishay, IRFD Datasheet